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PDF 2PA1774M Data sheet ( Hoja de datos )
| Número de pieza | 2PA1774M | |
| Descripción | PNP general purpose transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
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DATA SHEET
BOTTOM VIEW
M3D883
2PA1774M series
PNP general purpose transistor
Product specification
2004 Feb 19
1 page  
Philips Semiconductors
PNP general purpose transistor
wwwPr.DodautacSthsepeetc4Uifi.ccaotmion
2PA1774M series
−103
handbook, halfpage
VCEsat
(mV)
MDB665
−102
(1)
(2)
(3)
−10
−10−1
−1
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−1200
handbook, halfpage
VBEsat
(mV)
−1000
−800
−600
−400
(1)
(2)
(3)
MDB666
−200
−10−1
−1
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
−10 IC (mA) −102
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
handboo−k0, .h2alfpage
IC
(1)
(2)
(A) (3)
−0.16 (4)
(5)
−0.12
−0.08
−0.04
MDB667
(6)
(7)
(8)
(9)
(10)
0
0 −2 −4 −6
(1) IB = −2.7 mA.
(2) IB = −2.43 mA.
(3) IB = −2.16 mA.
(4) IB = −1.89 mA.
(5) IB = −1.62 mA.
(6) IB = −1.35 mA.
(7) IB = −1.08 mA.
(8) IB = −0.81 mA.
−8 −10
VCE (V)
(9) IB = −0.54 mA.
(10) IB = −0.27 mA.
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
103
RCEsat
(Ω)
102
MDB668
10 (1)
(2)
1
−10−1
−1
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(3)
−10
−102
−103
IC (mA)
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2004 Feb 19
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2PA1774M.PDF ] | |
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