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Numéro de référence | BLA0912-250R | ||
Description | Avionics LDMOS power transistor | ||
Fabricant | NXP Semiconductors | ||
Logo | |||
1 Page
BLA0912-250R
Avionics LDMOS power transistor
Rev. 01 — 3 March 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead
SOT502A flange package with a ceramic cap. The common source is connected to the
mounting flange.
Table 1. Test information
Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz
frequency band. Th = 25 °C; Zth(j-h) = 0.15 K/W; unless otherwise specified.
Mode of operation f
tp δ VDS PL Gp ΔGp ηD Pdroop(pulse) tr tf Zth(j-h) ϕins(rel)
(MHz)
(μs) % (V) (W) (dB) (dB) (%) (dB)
(ns) (ns) (K/W) (deg)
all modes
960 to 1215 100 10 36 250 13.5 0.8 50 0.1
25 6 0.18 ±5
TCAS
1030 to 1090 32 0.1 36 250 14.0 0.8 50 0
25 6 0.07 ±5
Mode-S
1030 to 1090 128 2 36 250 13.5 0.8 50 0.1
25 6 0.15 ±5
1030 to 1090 340 1 36 250 13.5 0.8 50 0.2
25 6 0.20 ±5
JTIDS
960 to 1215 3300 22 36 200 13.0 1.2 45 0.2
25 6 0.45 ±5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators, reducing common mode
inductance.
1.3 Applications
Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such
as Mode-S, TCAS and JTIDS, DME or TACAN.
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Pages | Pages 13 | ||
Télécharger | [ BLA0912-250R ] |
No | Description détaillée | Fabricant |
BLA0912-250 | Avionics LDMOS transistor | NXP Semiconductors |
BLA0912-250R | Avionics LDMOS power transistor | NXP Semiconductors |
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