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Toshiba Semiconductor - TOSHIBA Diode Silicon Epitaxial PIN Type

Numéro de référence JDP2S01AFS
Description TOSHIBA Diode Silicon Epitaxial PIN Type
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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JDP2S01AFS fiche technique
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S01AFS
JDP2S01AFS
www.DataSheet4U.com
UHF~VHF Band RF Switch Applications
· Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
· Low series resistance: rs = 0.65(typ.)
· Low capacitance: CT = 0.65 pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
VR
IF
Tj
Tstg
Rating
30
50
150
55~150
Unit
V
mA
°C
°C
Unit: mm
0.6±0.05
A
0.2
0.07 M A ±0.05
0.0.05
0.48+-00..0023
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Forward voltage
Capacitance
Series resistance
VR IR = 10 µA
IR VR = 30 V
VF IF = 50 mA
CT VR = 1 V, f = 1 MHz
rs IF = 10 mA, f = 100 MHz
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
JEDEC
JEITA
TOSHIBA
1-1L1A
Weight: 0.0006 g
Min Typ. Max Unit
30 ¾ ¾ V
¾ ¾ 0.1 µA
¾ 0.86 0.92 V
¾ 0.65 0.8 pF
¾ 0.65
1
1
1 2003-2-21

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