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Numéro de référence | JDP2S01S | ||
Description | UHF~VHF Band RF Attenuator Applications | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S01S
UHF~VHF Band RF Attenuator Applications
· Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
· Low series resistance: rs = 0.65Ω(typ.)
· Low capacitance: CT = 0.65 pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
VR
IF
Tj
Tstg
Rating
30
50
150
−55~150
Unit
V
mA
°C
°C
JDP2S01S
www.DataSheet4U.com
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Forward voltage
Capacitance
Series resistance
VR IR = 10 µA
IR VR = 30 V
VF IF = 50 mA
CT VR = 1 V, f = 1 MHz
rs IF = 10 mA, f = 100 MHz
Note: Signal level when capacitance is measured. Vsig = 20 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g
Min Typ. Max Unit
30 ¾ ¾ V
¾ ¾ 0.1 µA
¾ 0.86 0.92 V
¾ 0.65 0.8 pF
¾ 0.65
1
Ω
1
1 2001-12-05
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Pages | Pages 3 | ||
Télécharger | [ JDP2S01S ] |
No | Description détaillée | Fabricant |
JDP2S01AFS | TOSHIBA Diode Silicon Epitaxial PIN Type | Toshiba Semiconductor |
JDP2S01AFS | TOSHIBA Diode Silicon Epitaxial PIN Type | Toshiba Semiconductor |
JDP2S01E | UHF~VHF Band RF Attenuator Applications | Toshiba Semiconductor |
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