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Numéro de référence | JDP2S02AFS | ||
Description | UHF~VHF Band RF Switch Applications | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S02AFS
JDP2S02AFS
www.DataSheet4U.com
UHF~VHF Band RF Switch Applications
Unit: mm
• Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
• Low series resistance: rs = 1.0 Ω (typ.)
• Low capacitance: CT = 0.3 pF (typ.)
0.6±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature range
VR 30 V
IF 50 mA
Tj 150 °C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
0.2
0.07 M A ±0.05
0.1±0.05
0.48+-00..0023
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Forward voltage
Capacitance
Series resistance
VR IR = 10 μA
IR VR = 30 V
VF IF = 50 mA
CT VR = 1 V, f = 1 MHz
rs IF = 10 mA, f = 100 MHz
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
Min Typ. Max Unit
30 ⎯ ⎯ V
⎯ ⎯ 0.1 μA
⎯ 0.9 0.94 V
⎯ 0.3 0.4 pF
⎯ 1.0 1.5 Ω
2
1 2007-11-01
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Pages | Pages 3 | ||
Télécharger | [ JDP2S02AFS ] |
No | Description détaillée | Fabricant |
JDP2S02AFS | UHF~VHF Band RF Switch Applications | Toshiba Semiconductor |
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