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Toshiba Semiconductor - Silicon Epitaxial Planar Type

Numéro de référence JDV2S28FS
Description Silicon Epitaxial Planar Type
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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JDV2S28FS fiche technique
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S28FS
VCO for UHF Band Radio
High capacitance ratio: C1V/C3V = 2.15 (typ.)
Low series resistance: rs = 0.39 (typ.)
This device is suitable for use in small tuners.
JDV2S28FS
www.DataSheet4U.com
Unit: mm
0.6±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR 10 V
Tj 150 °C
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1V
C3V
C1V/C3V
rs
IR = 1 μA
VR = 5 V
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured. Vsig = 100mVrms
Marking
0.2
0.07 M A ±0.05
0.1±0.05
0.48+-00..0023
JEDEC
JEITA
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
Min Typ. Max Unit
10 ⎯ ⎯ V
⎯ ⎯ 1 nA
10.2 10.83
pF
4.66 5.05
2.08 2.22
0.39 0.51 Ω
1 2007-11-01

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