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Numéro de référence | JDV2S26FS | ||
Description | Silicon Epitaxial Planar Type | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S26FS
VCO for UHF Band Radio
• High capacitance ratio: C1V/C4V =2.9 (typ.)
• Low series resistance: rs = 0.4 Ω (typ.)
• This device is suitable for use in small tuners.
JDV2S26FS
www.DataSheet4U.com
Unit: mm
0.6±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR 10 V
Tj 150 °C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1V
C4V
C1V/C4V
rs
IR = 1 μA
VR = 5 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
⎯
VR = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured. Vsig = 100mVrms
Marking
0.2
0.07 M A ±0.05
0.1±0.05
0.48+-00..0023
fSC
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
Min Typ. Max Unit
10 ⎯ ⎯ V
⎯ ⎯ 1 nA
15.35 ⎯ 16.31
pF
5.27 ⎯
5.6
2.82 ⎯ 3 ⎯
⎯ 0.4 0.55 Ω
1 2007-11-01
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Pages | Pages 3 | ||
Télécharger | [ JDV2S26FS ] |
No | Description détaillée | Fabricant |
JDV2S26FS | Silicon Epitaxial Planar Type | Toshiba Semiconductor |
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