DataSheetWiki


N08L163WC2C fiches techniques PDF

NanoAmp Solutions - 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit

Numéro de référence N08L163WC2C
Description 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
Fabricant NanoAmp Solutions 
Logo NanoAmp Solutions 





1 Page

No Preview Available !





N08L163WC2C fiche technique
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N08L163WC2C
Advance Information
www.DataSheet4U.com
8Mb Ultra-Low Power Asynchronous CMOS SRAM
512K × 16 bit
Overview
Features
The N08L163WC2C is an integrated memory
device containing a 8 Mbit Static Random Access
Memory organized as 524,288 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N08L163WC2C is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 512Kb x 16 SRAMs
Product Family
• Single Wide Power Supply Range
2.2 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
1.5mA at 3.0V and 1µs(Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.5V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Ultra Low Power Sort Available
Part Number
Package Type
Operating
Temperature
Power
Supply (Vcc)
Speed
N08L163WC2CZ1 VFBGA Pb-Free -40oC to +85oC 2.2V - 3.6V 55ns
Standby
Current
(ISB),
Typical
Operating Current
(Icc), Typical
2 µA 1.5 mA @ 1MHz
Pin Configuration
123456
A LB OE A0
B I/O8 UB A3
C I/O9 I/O10 A5
A1 A2 CE2
A4 CE1 I/O0
A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 DNU A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H A18 A8
A9 A10 A11 NC
48 Pin VFBGA (top)
6 x 8 mm
Pin Descriptions
Pin Name
A0-A18
WE
CE1, CE2
OE
LB
UB
I/O0-I/O15
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
Stock No. 23380-C
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1

PagesPages 9
Télécharger [ N08L163WC2C ]


Fiche technique recommandé

No Description détaillée Fabricant
N08L163WC2A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit NanoAmp Solutions
NanoAmp Solutions
N08L163WC2C 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit NanoAmp Solutions
NanoAmp Solutions

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche