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PDF ATF-531P8 Data sheet ( Hoja de datos )
| Número de pieza | ATF-531P8 | |
| Descripción | High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package | |
| Fabricantes | Agilent | |
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Agilent ATF-531P8 High Linearitywww.DataSheet4U.com
Enhancement Mode[1]
Pseudomorphic HEMT in
2x2 mm2 LPCC[3] Package
Data Sheet
Description
Agilent Technologies’s
ATF-531P8 is a single-voltage
high linearity, low noise
E-pHEMT housed in an 8-lead
JEDEC-standard leadless
plastic chip carrier (LPCC [3])
package. The device is ideal as
a high linearity, low-noise,
medium-power amplifier. Its
operating frequency range is
from 50 MHz to 6 GHz.
The thermally efficient package
measures only 2 mm x 2 mm x
0.75 mm. Its backside
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85°C. All
devices are 100% RF & DC tested.
Note:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conforms to JEDEC reference outline MO229
for DRP-N
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
Pin Connections and
Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Pin 1 (Source)
Pin 8
Pin 2 (Gate)
Pin 3
3Px
Pin 7 (Drain)
Pin 6
Pin 4 (Source)
Pin 5
Top View
Note:
Package marking provides orientation and
identification:
“3P” = Device Code
“x” = Date code indicates the month of
manufacture.
Features
• Single voltage operation
• High linearity and gain
• Low noise figure
• Excellent uniformity in product
specifications
• Small package size:
2.0 x 2.0 x 0.75 mm
• Point MTTF > 300 years[2]
• MSL-1 and lead-free
• Tape-and-reel packaging option
available
Specifications
2 GHz; 4V, 135 mA (Typ.)
• 38 dBm output IP3
• 0.6 dB noise figure
• 20 dB gain
• 10.7 dB LFOM[4]
• 24.5 dBm output power at 1 dB gain
compression
Applications
• Front-end LNA Q1 and Q2 driver or
pre-driver amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
• Driver amplifier for WLAN,
WLL/RLL and MMDS applications
• General purpose discrete E-pHEMT
for other high linearity applications
1 page  
ATF-531P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3
45
40
35
30
25 3V
4V
5V
20
75 90 105 120 135 150 165 180
Ids (mA)
Figure 8. OIP3 vs. Ids and Vds at 900 MHz.
45
40
35
30
25 3V
4V
5V
20
75 90 105 120 135 150 165 180
Ids (mA)
Figure 9. OIP3 vs. Ids and Vds at 2 GHz.
www.DataSheet4U.com
45
40
35
30
25 3V
4V
5V
20
75 90 105 120 135 150 165 180
Ids (mA)
Figure 10. OIP3 vs. Ids and Vds at 3.9 GHz.
17
16
15
14
13
12
3V
11 4V
5V
10
75 90 105 120 135 150 165 180
Ids (mA)
Figure 11. Small Signal Gain vs. Ids and Vds
at 900 MHz.
30
17
16
15
14
13
12
3V
11 4V
5V
10
75 90 105 120 135 150 165 180
Ids (mA)
Figure 12. Small Signal Gain vs. Ids and Vds
at 2 GHz.
30
25 25
20 20
15
3V
4V
5V
10
75 90 105 120 135 150 165 180
Idq (mA)
Figure 14. P1dB vs. Idq and Vds at 900 MHz.
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive. The
objective of load pull is to optimize OIP3 and
therefore may trade-off Small Signal Gain, P1dB
and VSWR.
15 3V
4V
5V
10
75 90 105 120 135 150 165 180
Idq (mA)
Figure 15. P1dB vs. Idq and Vds at 2 GHz.
12
10
8
6
4
3V
2 4V
5V
0
75 90 105 120 135 150 165 180
Ids (mA)
Figure 13. Small Signal Gain vs. Ids and Vds
at 3.9 GHz.
30
25
20
15 3V
4V
5V
10
75 90 105 120 135 150 165 180
Idq (mA)
Figure 16. P1dB vs. Idq and Vds at 3.9 GHz.
5
5 Page 
ATF-531P8 Typical Scattering Parameters, VDS = 5V, IDS = 135 mA
Freq.
GHz
S11
Mag. Ang.
S21
dB Mag. Ang.
dB
S12
Mag.
0.1 0.805 -56.0
0.2 0.815 -94.0
0.3 0.831 -116.9
0.4 0.839 -131.7
0.5 0.844 -140.9
0.6 0.846 -148.3
0.7 0.850 -154.0
0.8 0.852 -158.7
0.9 0.855 -162.5
1 0.854 -165.6
1.5 0.855 -177.1
1.9 0.857 176.3
2 0.851 174.9
2.4 0.851 169.4
3 0.852 161.8
4 0.857 151.1
5 0.859 141.0
6 0.870 131.8
7 0.867 123.6
8 0.877 115.6
9 0.881 106.7
10 0.885 95.6
11 0.892 85.2
12 0.875 74.2
13 0.883 63.8
14 0.886 57.9
15 0.913 47.4
16 0.908 43.1
17 0.891 32.2
18 0.928 20.6
34.11
32.03
29.97
28.10
26.58
25.20
24.00
22.93
21.98
21.10
17.71
15.71
15.46
13.89
11.92
9.35
7.30
5.57
4.11
2.80
1.82
0.75
-0.30
-1.33
-2.49
-3.58
-4.78
-5.81
-6.99
-8.64
50.734
39.967
31.517
25.418
21.322
18.207
15.852
14.014
12.559
11.351
7.681
6.099
5.931
4.946
3.943
2.935
2.318
1.899
1.605
1.381
1.233
1.090
0.966
0.858
0.751
0.662
0.577
0.512
0.447
0.370
152.1
132.6
120.5
112.1
106.4
101.8
98.0
94.8
92.0
89.6
79.5
73.0
71.7
65.6
57.1
43.9
30.9
18.5
6.5
-5.2
-17.0
-30.1
-42.9
-54.3
-65.9
-76.4
-86.8
-94.4
-105.1
-112.1
-39.17
-34.89
-33.56
-32.77
-32.40
-32.04
-31.70
-31.70
-31.70
-31.37
-31.06
-30.46
-30.17
-29.63
-29.12
-27.74
-26.56
-25.51
-24.44
-23.48
-22.38
-21.41
-20.72
-20.00
-19.66
-19.09
-18.71
-18.56
-18.49
-18.86
0.011
0.018
0.021
0.023
0.024
0.025
0.026
0.026
0.026
0.027
0.028
0.030
0.031
0.033
0.035
0.041
0.047
0.053
0.060
0.067
0.076
0.085
0.092
0.100
0.104
0.111
0.116
0.118
0.119
0.114
Ang.
62.6
46.6
36.3
30.7
27.2
24.9
23.3
22.3
21.6
20.9
21.1
22.3
22.3
23.3
24.3
24.4
22.8
19.7
16.3
11.8
6.1
-1.3
-9.1
-17.0
-24.8
-31.8
-40.3
-47.8
-54.9
-62.6
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S22
Mag. Ang.
0.468
0.419
0.387
0.364
0.354
0.346
0.342
0.339
0.337
0.335
0.331
0.331
0.336
0.315
0.323
0.343
0.367
0.391
0.417
0.440
0.458
0.482
0.500
0.540
0.593
0.636
0.660
0.699
0.747
0.717
-45.2
-79.7
-102.0
-117.9
-127.0
-135.4
-141.6
-146.5
-150.5
-153.9
-165.0
-170.4
-170.9
-175.8
178.2
169.9
162.1
154.0
146.2
137.7
129.1
118.1
107.5
98.6
87.1
75.8
66.8
57.0
48.4
39.9
MSG/MAG
dB
36.64
33.46
31.76
30.43
29.49
28.62
27.85
27.32
26.84
26.24
24.38
23.08
22.82
21.76
19.82
16.43
14.19
12.82
11.24
10.41
9.75
8.94
8.31
6.52
5.87
5.23
6.01
4.78
2.98
2.41
Typical Noise Parameters, VDS = 5V, IDS = 135 mA
Freq Fmin
GHz dB
Γopt
Mag.
Γopt
Ang.
Rn/50
0.5
0.45
0.20
154.00
0.037
0.9
0.48
0.32
160.00
0.032
1
0.50
0.35
166.00
0.030
1.5
0.55
0.40
170.00
0.030
2
0.65
0.46
177.40
0.030
2.4 0.70 0.49 -175.10 0.032
3 0.77 0.55 -168.90 0.031
3.5 0.84 0.58 -162.60 0.037
3.9 0.90 0.62 -158.20 0.043
5 1.06 0.66 -145.80 0.085
5.8 1.20 0.69 -137.30 0.140
6 1.19 0.69 -135.40 0.150
7 1.40 0.77 -126.50 0.320
8 1.52 0.81 -117.90 0.550
9 1.75 0.82 -107.50 0.890
10
1.88
0.85
-95.60
1.530
Ga
dB
28.85
25.13
24.43
21.26
19.38
17.90
16.33
15.23
14.60
12.66
11.60
11.38
10.55
9.84
9.05
8.29
40
30
MSG
20
MAG
10
S21
0
-10
0 5 10 15
FREQUENCY (GHz)
Figure 31. MSG/MAG & |S21|2 (dB)
@ 5V, 135 mA.
20
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet ATF-531P8.PDF ] | |
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