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K6F3216U6M fiches techniques PDF

Samsung semiconductor - 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Numéro de référence K6F3216U6M
Description 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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K6F3216U6M fiche technique
K6F3216U6M Family
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Document Title
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised
- Changed ICC2 from 35mA to 40mA for 55ns product
from 25mA to 35mA for 70ns product
- Changed ISB1 from 30µA to 40µA
- Changed IDR from 15µA to 20µA
1.0 Finalize
Draft Date
January 31, 2002
July 30, 2002
Remark
Preliminary
Preliminary
December 18, 2002 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
December 2002

PagesPages 9
Télécharger [ K6F3216U6M ]


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