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Numéro de référence | K6F4016R4E | ||
Description | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | ||
Fabricant | Samsung semiconductor | ||
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1 Page
K6F4016R4E Family
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Document Title
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
1.0 Finalize
Draft Date
Remark
November 10, 2000 Preliminary
March 12, 2001
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 1.0
March 2001
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Pages | Pages 9 | ||
Télécharger | [ K6F4016R4E ] |
No | Description détaillée | Fabricant |
K6F4016R4E | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor |
K6F4016R4E-F | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor |
K6F4016R4G | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | SAMSUNG Electronics |
K6F4016R4G-F | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor |
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