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PDF STD01N Data sheet ( Hoja de datos )
| Número de pieza | STD01N | |
| Descripción | Darlington Transistors for Audio Amplifiers | |
| Fabricantes | Sanken electric | |
| Logotipo |  |
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STD01N and STD01P
www.DataSheet4U.com
Darlington Transistors for Audio Amplifiers
Features and Benefits
▪ Built-in temperature compensation diodes
▪ High power (100 W) handling in a small package
(TO-3P), for minimized heat sink requirements
▪ Built-in drivers and temperature compensation diodes,
reducing external component count and simplifying
circuit design
▪ NPN and PNP versions
▪ Emitter terminals placed symmetrically, pin 5 on NPN
and pin 1 on PNP models, allowing adjacent placement on
PCB to minimize trace length and output skew when used
in pairs
▪ Approved by major manufacturers
Package: 5 pin TO-3P (MT-100)
Description
The STD01N and STD01Pare enhanced Darlington transistors
with built-in drivers and temperature compensation diode.
Manufactured using the unique Sanken thin-wafer production
technology, these devices achieve higher power levels through
decreased thermal resistance, and can withstand higher voltages
than similar devices on the market.
The temperature compensation diode is integrated on the same
chip as the power transistors. By this design, the STD01N and
STD01P eliminate delays that would otherwise be induced
between thermal sensing at the heat source, and the operation of
the compensation circuitry. Thus, these transistors are ideal for
applications where enhanced thermal stability is required.
This device is provided in a 5-pin TO-3P plastic package with
pin 4 removed. Contact Sanken™ for application support and
additional information on device performance.
Applications include:
▪ General amplifier applications
▪ Professional audio amplifiers
▪ Car audio amplifiers
STD01N
STD01P
Not to scale
12345
12345
Emitter pins symmetrical
Equivalent Circuits
STD01N
3
1
4
STD01P
1
25
5
3
Datasheet 28104.011
1 page  
STD01N and
STD01P
STD01N
Terminal
Configuration
Darlington Transistors for Audio Amplifierswww.DataSheet4U.com
PACKAGE OUTLINE DRAWING, TO-3P
STD01P
Terminal
Configuration
15.6 ±0.3
Gate Burr
4.8 ±0.2
2
+0.2
–0.1
Branding
XXXXXXXX
XXXXXXXX
1.74
+0.2
–0.1
1.34
+0.2
–0.1
1.05
+0.2
–0.1
1.7 ±0.1
Terminal dimension
at case surface
15.8 ±0.2
4×P2.54 ±0.1 = (10.16)
Terminal dimensions at case surface
4×P2.54 ±0.6 = 10.16 ±0.8
Terminal dimension at lead tips
0.65
+0.2
–0.1
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12345
Gate burr: 0.3 mm (max.), mold flash may appear at opposite side
Terminal core material: Cu
Terminal treatment: Ni plating and solder dip
Heat sink material: Cu
Heat sink treatment: Ni plating
Leadform: 2804
Weight (approximate): 6.0 g
Dimensions in millimeters
Branding codes (exact appearance at manufacturer discretion):
1st line, type: STD01X
Where: X is the transistor type (N or P)
2nd line, lot: YMDD H
Where: Y is the last digit of the year of manufacture
M is the month (1 to 9, O, N, D)
DD is the 2-digit date
H is the hFE rating (O or Y; for values see
footnote, Electrical Characteristics table)
Leadframe plating Pb-free. Device composition
includes high-temperature solder (Pb >85%),
which is exempted from the RoHS directive.
Sanken Electric Co., Ltd.
3-6-3 Kitano, Niiza-shi, Saitama-ken
352-8666, Japan
Phone:+81-48-472-1111
http://www.sanken-ele.co.jp
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STD01N.PDF ] | |
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