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Numéro de référence | H546 | ||
Description | NPN SILICON TRANSISTOR | ||
Fabricant | SHANTOU HUASHAN ELECTRONIC DEVICES | ||
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1 Page
Shantou Huashan Electronic Devices Co.,Ltd.
NPN SI LIwCwOw.NDataTSRheAetN4US.cIoSmTOR
H546
SWITCHING AND AMPLIFIER
ABSOLUTE MAXIMUM RATINGS Ta=25
TO-92
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
500mW
80V
65V
1 Collector C
2 Base B
3 Emitter E
VEBO Emitter-Base Voltage
6V
IC Collector Current
100mA
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
HFE 1
VCE(sat1)
VCE(sat2)
VBE(sat1)
VBE(sat2)
VBE(ON)
fT
Cob
NF
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
80
V IC=100 A, IE=0
Collector-Emitter Breakdown Voltage
65
V IC=1mA, IB=0
Emitter-Base Breakdown Voltage
6
V IE=1mA IC=0
Collector Cut-off Current
15 nA
VCB=30V, IE=0
DC Current Gain
110 800
VCE=5V, IC=2mA
Collector- Emitter Saturation Voltage
90 250 mV IC=10mA, IB=0.5mA
200 600 mV IC=100mA, IB=5mA
Base-Emitter Saturation Voltage
0.7 1 V IC=10mA, IB=0.5mA
0.9 1.2 V IC=100mA, IB=5mA
Base-Emitter On Voltage
580 660 700 mV
VCE=5V, IC=2mA
Current Gain-Bandwidth Product
300 MHz VCE=5V, IC=10mA
Output Capacitance
2.5 pF VCB=10V, IE=0
f=100MHz
Noise Figure
2 10 dB VCE=5V, IC=0.2Ma
f=1KHz Rg=2K
hFE Classification
A
110 220
B
200 450
C
420 800
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Pages | Pages 2 | ||
Télécharger | [ H546 ] |
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