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NXP Semiconductors - 3Q Hi-Com Triac

Numéro de référence BTA208X-1000B
Description 3Q Hi-Com Triac
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BTA208X-1000B fiche technique
BTA208X-1000B
3Q Hi-Com Triac
22 May 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic
package intended for use in circuits where very high blocking voltage, high static and
dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full rated
RMS current at the maximum rated junction temperature without the aid of a snubber.
2. Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
Isolated mounting base package
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Very high voltage capability
3. Applications
Compressor starting controls
General purpose motor controls
Reversing induction motor controls e.g. vertical axis washing machines
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Th ≤ 73 °C; Fig. 1; Fig. 2;
Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 1000 V
- - 65 A
- - 8A
2 18 50 mA
2 21 50 mA
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