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Numéro de référence | H557 | ||
Description | NPN SILICON TRANSISTOR | ||
Fabricant | SHANTOU HUASHAN ELECTRONIC DEVICES | ||
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1 Page
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H557
APPLICATIONS
SWITCHING AND AMPLIFIER
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
www.DataSPheCet4U.comCollector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter- Base Voltage
IC Collector Current
-55~150
150
500mW
-50V
-45V
-5V
-100mA
TO-92
1 Collector C
2 Base B
3 Emitter E
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
HFE
VCE(sat1)
VCE(sat2)
VBE(sat1)
VBE(sat2)
VBE(ON1)
VBE(ON2)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
IC=-100 A, IE=0
IC=-10mA, IB=0
IE=-100 A IC=0
VCB=-30V, IE=0
VCE=-5V, IC=-2mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA
VCE=- 5V, IC=- 10mA, f=1MHz
VCB=-10V, IE=0,f=1MHz
hFE Classification
A
110 220
B
200 450
C
420 800
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Pages | Pages 2 | ||
Télécharger | [ H557 ] |
No | Description détaillée | Fabricant |
H5551 | NPN SILICON TRANSISTOR | SHANTOU HUASHAN ELECTRONIC DEVICES |
H556 | PNP Silicon Transistor | Shantou Huashan Electronic |
H557 | NPN SILICON TRANSISTOR | SHANTOU HUASHAN ELECTRONIC DEVICES |
H558 | NPN SILICON TRANSISTOR | SHANTOU HUASHAN ELECTRONIC DEVICES |
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