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BLM6G22-30 fiches techniques PDF

NXP Semiconductors - W-CDMA 2100 MHz to 2200 MHz power MMIC

Numéro de référence BLM6G22-30
Description W-CDMA 2100 MHz to 2200 MHz power MMIC
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLM6G22-30 fiche technique
BLM6G22-30; BLM6G22-30Gwww.DataSheet4U.com
W-CDMA 2100 MHz to 2200 MHz power MMIC
Rev. 03 — 21 November 2008
Preliminary data sheet
1. Product profile
1.1 General description
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from
2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead
(SOT834-1).
Table 1. Typical performance
Typical RF performance at Th = 25 °C.
Mode of operation f
(MHz)
2-carrier W-CDMA 2110 to 2170
VDS
(V)
28
PL(AV)
(W)
2
Gp ηD IMD3
(dB) (%) (dBc)
29.5 9
48[1]
ACPR
(dBc)
50[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at a frequency of 2110 MHz:
N Average output power = 2 W
N Power gain = 30 dB (typ)
N Efficiency = 9 %
N IMD3 = 48 dBc
N ACPR = 50 dBc
I Integrated temperature compensated bias
I Excellent thermal stability
I Biasing of individual stages is externally accessible
I Integrated ESD protection
I Small component size, very suitable for PA size reduction
I On-chip matching (input matched to 50 Ohm, output partially matched)
I High power gain
I Designed for broadband operation (2100 MHz to 2200 MHz)
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

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