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NXP Semiconductors - 16 A three-quadrant high commutation triac

Numéro de référence BTA316-800ET
Description 16 A three-quadrant high commutation triac
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BTA316-800ET fiche technique
BTA316-800ET
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16 A three-quadrant high commutation triac
Rev. 01 — 29 March 2010
Product data sheet
1. Product profile
1.1 General description
Planar passivated, new generation, high commutation, high operating junction
temperature, three-quadrant triac in a SOT78 plastic package.
1.2 Features and benefits
„ Hi-Com triac with maximum false
trigger immunity
„ High operating junction temperature
„ Planar passivated
„ Sensitive gate for direct triggering from
microcontrollers and logic ICs
„ Triggering in three quadrants only
1.3 Applications
„ Applications subject to high
temperature
„ Electronic thermostats, heating and
cooking controls
„ High power motor controls in washing
machines and vacuum cleaners
„ Refrigeration and air-conditioner
compressor controls
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDRM
repetitive peak
off-state voltage
ITSM
Tj
IT(RMS)
non-repetitive peak
on-state current
junction temperature
RMS on-state
current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; see Figure 4 and 5
full sine wave; Tmb 126 °C;
see Figure 3, 1 and 2
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 7
Min Typ Max Unit
- - 800 V
- - 140 A
- - 150 °C
- - 16 A
- - 10 mA
- - 10 mA
- - 10 mA

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