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Freescale Semiconductor - RF LDMOS Wideband Integrated Power Amplifiers

Numéro de référence MWE6IC9080GNR1
Description RF LDMOS Wideband Integrated Power Amplifiers
Fabricant Freescale Semiconductor 
Logo Freescale Semiconductor 





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MWE6IC9080GNR1 fiche technique
Freescale Semiconductor
Technical Data
Document Number: MWE6IC9080N
www.DRaetavS.he0e,t44U/.2co0m10
RF LDMOS Wideband Integrated
Power Amplifiers
The MWE6IC9080N wideband integrated circuit is designed with on--chip
matching that makes it usable from 865 to 960 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulations.
Typical GSM
630 mA, Pout
P=e8r0foWrmaattnsceC:WVDD
=
28
Volts,
IDQ1
=
230
mA,
IDQ2
=
Frequency
Gps
(dB)
PAE
(%)
MWE6IC9080NR1
MWE6IC9080GNR1
MWE6IC9080NBR1
865--960 MHz, 80 W CW, 28 V
GSM, GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
920 MHz
29.0 49.7
940 MHz
28.8 51.6
960 MHz
28.5 52.3
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 128 Watts CW
(3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 Watts CW
Pout
Typical Pout @ 1 dB Compression Point 90 Watts CW
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 =
630 mA, Pout = 35 Watts Avg.
Frequency
Gps
(dB)
PAE
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
CASE 1618--02
TO--270 WB--14
PLASTIC
MWE6IC9080NR1
CASE 1621--02
TO--270 WB--14 GULL
PLASTIC
MWE6IC9080GNR1
920 MHz 30.0 37.0
940 MHz 30.0 37.8
960 MHz 29.5 38.0
Features
--62
--62
--62
--75 0.8
--75 1.2
--75 1.5
CASE 1617--02
TO--272 WB--14
PLASTIC
MWE6IC9080NBR1
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source Scattering Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1
VGS2
VGS1
RFin
VGS1
VGS2
VDS1
Quiescent Current
Temperature Compensation (1)
RFout/VDS2
NC
VDS1
VVGGSS12
NC
RFin
RFin
NC
VGS1
VGS2
VDS1
NC
1
2
3
4
5
6
7
8
9
10
11
12
14 RFout /VDS2
13 RFout /VDS2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
1

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