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KEC semiconductor - N-Ch Trench MOSFET

Numéro de référence KU048N03D
Description N-Ch Trench MOSFET
Fabricant KEC semiconductor 
Logo KEC semiconductor 





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KU048N03D fiche technique
SEMICONDUCTOR
TECHNICAL DATA
KU048N03Dwww.DataSheet4U.com
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converter.
FEATURES
VDSS=30V, ID=79A.
Low Drain to Source On-state Resistance.
: RDS(ON)=4.8m (Max.) @ VGS=10V
: RDS(ON)=6.5m (Max.) @ VGS=4.5V
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
123
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
DC@TC=25
Pulsed
Single Pulsed Avalanche Energy
(Note1)
(Note2)
(Note3)
VDSS
VGSS
ID
IDP
EAS
30 V
20 V
84
A
336
124 mJ
@TC=25
Drain Power Dissipation
@Ta=25
(Note1)
(Note2)
PD
60
W
3.8
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Case
(Note1)
Tj
Tstg
RthJC
150
-55 150
2.1
/W
Thermal Resistance, Junction to Ambient (Note2) RthJA
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 1 Pad of 2 oz copper.
Note 3) L=18 H, IAS=84A, VDD=15V, VGS=10V, Starting Tj=25
40
/W
Marking
DPAK (1)
KU048N03
D
Type Name
Lot No
PIN CONNECTION (TOP VIEW)
D
2
2
1
G
2010. 6. 17
13
3
S
Revision No : 0
1/4

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