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Numéro de référence | QS8J4 | ||
Description | 4V Drive Pch Pch MOSFET | ||
Fabricant | ROHM Semiconductor | ||
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4V Drive Pch + Pch MOSFET
QS8J4
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(4V drive).
Application
Switching
Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : J04
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
QS8J4
Taping
TR
3000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
Is
Isp *1
30
20
4
16
1
16
PD *2
1.5
1.25
Tch 150
Tstg 55 to +150
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a ceramic board.
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
Inner circuit
(8) (7) (6) (5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source ∗2
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗1
(1) (2)
∗1
(3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
83.3
100
Unit
°C / W /TOTAL
°C / W /ELEMENT
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.04 - Rev.A
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Pages | Pages 6 | ||
Télécharger | [ QS8J4 ] |
No | Description détaillée | Fabricant |
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