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Numéro de référence | E50A2CR | ||
Description | STACK SILICON DIFFUSED DIODE | ||
Fabricant | KEC | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=50A.
Repetitive Peak Reverse Voltage : VRRM=200V.
POLARITY
E50A2CS (+ Type)
E50A2CR (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Forward Current
Peak 1 Cycle Surge Current
Junction Temperature
Storage Temperature Range
SYMBOL
VRRM
IF(AV)
IFSM
Tj
Tstg
RATING
200
50
600 (50Hz)
-40 190
-40 150
UNIT
V
A
A
E50A2CS, E50A2CRwww.DataSheet4U.com
STACK SILICON DIFFUSED DIODE
A3
A2
D3 A1
E FG
DIM
A1
A2
A3
B1
B2
C1
C2
D1
MILLIMETERS
10.0 +_0.3
13.5 +_0.3
24.0 +_0.5
8.5 +_0.3
10.0 +_ 0.3
2.0 +_ 0.3
5.0 +_0.3
2.5+_ 0.3
DIM
D2
D3
E
F
G
H
T
MILLIMETERS
5.0 +_0.3
4.5+_ 0.3
1.9+_ 0.3
9.0 +_0.3
1.0+_ 0.3
4.4+_ 0.5
0.6+_ 0.3
MR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
VFM
IRRM
trr
Temperature Resistance
Rth
TEST CONDITION
IFM=100A
VRRM=200V
IF=0.1A, IR=0.1A
DC total junction to case
MIN.
-
-
-
-
TYP.
-
-
-
-
MAX.
1.05
50
15
1.0
UNIT
V
A
S
/W
2010. 1. 28
Revision No : 0
1/2
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Pages | Pages 2 | ||
Télécharger | [ E50A2CR ] |
No | Description détaillée | Fabricant |
E50A2CBR | STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) | KEC(Korea Electronics) |
E50A2CBR | STACK SILICON DIFFUSED DIODE | KEC |
E50A2CBS | STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) | KEC(Korea Electronics) |
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