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PDF BTA16-800BW3G Data sheet ( Hoja de datos )
| Número de pieza | BTA16-800BW3G | |
| Descripción | Triacs Silicon Bidirectional Thyristors | |
| Fabricantes | ON Semiconductor | |
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BTA16-600BW3G,
BTA16-800BW3G
www.DataSheet4U.com
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
• Blocking Voltage to 800 V
• On-State Current Rating of 16 A RMS at 80°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 1500 V/ms minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating dI/dt − 4.0 A/ms minimum at 125°C
• Internally Isolated (2500 VRMS)
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA16−600BW3G
BTA16−800BW3G
VDRM,
VRRM
600
800
V
On-State RMS Current
IT(RMS)
(Full Cycle Sine Wave, 60 Hz, TC = 80°C)
16
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
170 A
120 A2sec
Non−Repetitive Surge Peak Off−State
Voltage (TJ = 25°C, t = 10ms)
VDSM/
VRSM
VDSM/VRSM
+100
V
Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A
Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 80°C)
PGM 20 W
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
W
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Viso 2500 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
16 AMPERES RMS
600 thru 800 VOLTS
MT2
4
MT1
G
MARKING
DIAGRAM
123
x
A
Y
WW
G
TO−220AB
CASE 221A
STYLE 12
BTA16−xBWG
AYWW
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb−Free Package
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 No Connection
ORDERING INFORMATION
Device
BTA16−600BW3G
Package
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
BTA16−800BW3G TO−220AB 50 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 1
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
1 Publication Order Number:
BTA16−600BW3/D
1 page  
BTA16−600BW3G, BTA16−800BW3G
100
Q3
www.DataSheet4U.com
1.8
VD = 12 V
RL = 30 W
1.6
1.4 Q1
VD = 12 V
RL = 30 W
10
Q2
Q1
1.2
1 Q3
0.8
0.6 Q2
1
−40 −25 −10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Trigger Current Variation
0.4
−40 −25 −10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Gate Trigger Voltage Variation
5000
VD = 800 Vpk
4K TJ = 125°C
3K
2K
1K
0
10 100 1000 10000
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
TRIGGER
CHARGE
CHARGE
CONTROL
NON‐POLAR
CL
LL
MEASURE
I
MT2
1N914 51 W
G
MT1
1N4007
-
200 V
+
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
http://onsemi.com
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