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PDF N02L163WN1A Data sheet ( Hoja de datos )
| Número de pieza | N02L163WN1A | |
| Descripción | 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit | |
| Fabricantes | NanoAmp Solutions | |
| Logotipo |  |
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NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N02L163WN1Awww.DataSheet4U.com
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16bit
Overview
Features
The N02L163WN1A is an integrated memory
device containing a 2 Mbit Static Random Access
Memory organized as 131,072 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N02L163WN1A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs.
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Part Number
N02L163WN1AB
N02L163WN1AT
N02L163WN1AB1
N02L163WN1AT2
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
48 - BGA
44 - TSOP II
48 - BGA Pb-Free
-40oC to +85oC
2.3V - 3.6V
55ns @ 2.7V
70ns @ 2.3V
2 µA
2 mA @ 1MHz
44 - TSOP II Green
(DOC# 14-02-014 REV L ECN# 01-1000)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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1 page  
NanoAmp Solutions, Inc.
N02L163WN1Awww.DataSheet4U.com
Power Savings with Page Mode Operation (WE = VIH)
Page Address (A4 - A16 )
Word Address (A0 - A3)
CE
Word 1
Open page
Word 2
...
Word 16
OE
LB, UB
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
(DOC# 14-02-014 REV L ECN# 01-1000)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5
5 Page 
NanoAmp Solutions, Inc.
N02L163WN1Awww.DataSheet4U.com
Ordering Information
N02L163WN1AX-XX X
Temperature I = Industrial, -40°C to 85°C
Performance
55 = 55ns
Package Type
T = 44-pin TSOP II
B = 48-ball BGA
T2 = 44-pin TSOP II Green Package
B1 = 48-ball BGA Pb-Free Package
Revision History
Revision #
A
B
C
D
E
F
G
H
I
J
K
L
Date
Dec. 1999
Sept. 2000
Oct. 2000
Oct. 2000
Jan. 2001
Mar. 2001
May 2001
June 2001
Sept. 2001
Dec. 2001
Nov. 2002
Oct. 2004
Change Description
Initial Preliminary Release
Modified Voltage Range and Standby Current Limits.
Added Missing Tas Parameter Specification.
Modified Standby Current Specifications.
Extensive Modification to use voltage regulator design
Modified BGA pinout, access time 70ns @ 2.7V, misc. errata
Changed access time to 55ns, modified 44-Lead TSOP Package diagram
Revised voltage range in Timing table, revised Dimensions table
Minor parametric modifications, full production release
Part number change from EM128L16, modified Overview and Features, added
Page Mode Operation diagram, revised Operating Characteristics table, Package
diagram, Functional Description table and Ordering Information diagram
Replaced Isb and Icc on Product Family table with typical values
Added Pb-Free and Green Package Option
© 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-
poses only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application
or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp
product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
(DOC# 14-02-014 REV L ECN# 01-1000)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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