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3KBP10M fiches techniques PDF

Gulf Semiconductor - SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current:3.0A

Numéro de référence 3KBP10M
Description SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current:3.0A
Fabricant Gulf Semiconductor 
Logo Gulf Semiconductor 





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3KBP10M fiche technique
3KBP005M THRU 3KBP10M
SINGLE PHASE GLASS
PASSIVATED BRIDGE RECTIFIER
Voltage: 50 to 1000V
Current:3.0A
Features
Glass passivated chip junction
High case dielectric strength
High surge current capability
Ideal for printed circuit board
www.DataSheet4U.com
KBPM
Mechanical Data
Terminal: Plated leads solderable per MIL-STD 202E,
Method 208C
Case: UL-94 Class V-0 recognized Flame Retardant Epoxy
Polarity: As marked on body
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
Symbol
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified output current
Ta =55
Peak forward surge current 50 Hz single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage drop per diode
at 3.0A
Rating for fusing (t < 10ms)
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
I2t
Maximum DC reverse current at
rated DC blocking voltage per leg
Maximum thermal resistance per leg
Ta = 25°C
Ta = 125°C
(Note1)
Ir
Rth(ja)
Rth(jc)
Typical junction capacitance per leg at 4.0V,1MHz
Cj
3KBP
005M
50
35
50
3KBP
01M
100
70
100
3KBP
02M
200
140
200
3KBP
04M
400
280
400
3.0
80
1.05
32
5.0
500
30
11
25
3KBP
06M
600
420
600
3KBP
08M
800
560
800
3KBP
10M
1000
700
1000
units
V
V
V
A
A
V
A2Sec
µA
/W
pF
Operating junction and storage temperature range
Tj, Tstg
-55 to +150
Note:
1. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.47 x 047" (12 x 12mm) copper pads
Rev.A1
www.gulfsemi.com

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