(PDF) MS1226 Datasheet - RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

Número de pieza	MS1226
Descripción	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Fabricantes	Advanced Power Technology
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No Preview Available ! RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. www.DataSheet4U.com MS1226 ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO Paramete Co llector-base Voltage Co llector-emitter Voltage VEBO Emit ter-Base Voltage IC PDISS Dev ice Current Po wer Dissipation TJ Ju nction Temperature TSTG Storage Temperature r Thermal Data RTH(J-C) Junction-case Thermal Resistance 053-7055 Rev - 10-2002 Value 65 36 4.0 4.5 80 +200 -65 to +150 U nit V V V A W C C 2.2 C/W 1 page

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PDF MS1226 Data sheet ( Hoja de datos )