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MS1227 fiches techniques PDF

Advanced Power Technology - RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

Numéro de référence MS1227
Description RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Fabricant Advanced Power Technology 
Logo Advanced Power Technology 





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MS1227 fiche technique
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
30 MHz
12.5 VOLTS
GOLD METALIZATION
POUT = 20 W MINIMUM
GP = 15 dB
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1227 is a 12.5V epitaxial NPN planar transistor designed
primarily for SSB communications. This device utilizes emitter
ballasting for improved ruggedness and reliability.
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MS1227
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
Value
36
18
4.0
4.5
80
+200
-65 to +150
2.2
MS1227.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Unit
V
V
V
A
W
°C
°C
° C/W

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