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D30XBN20 fiches techniques PDF

Shindengen Electric - SBD Bridge Diode

Numéro de référence D30XBN20
Description SBD Bridge Diode
Fabricant Shindengen Electric 
Logo Shindengen Electric 





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D30XBN20 fiche technique
SBD Bridge
D30XBN20
200V 30A
特長
• 薄型 SIP パッケージ
• SBD ブリッジ
• 低 VF・低 IR
Feature
• Thin-SIP
• SBD Bridge
• Low VF・Low IR
シングルインライン型
Single In-line Package
■外観図 OUTLINE
Package5S
Unit : mm
Weight : 7.1g(typ.)
D30XBN 20 0264
■定格表 RATINGS
外形図については新電元 Web サイト又は〈半導体製品一覧表〉をご参照下
さい。捺印表示については捺印仕様をご確認下さい。
For details of outline dimensions, refer to our web site or the Semiconductor
Short Form Catalog. As for the marking, refer to the specification “Marking,
Terminal Connection.”
Item
Storage Temperature
Operation Junction Temperature
Maximum Reverse Voltage
Average Rectified Forward Current
Peak Surge Forward Current
Dielectric Strenght
Mounting Torque
Symbol Conditions
Type No.
50Hz sine wave, Resistance load
With heatsink
Without heatsink
50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25
Terminals to Case, AC 1 minute
Recommended torque : 0.5 N m
D30XBN20
Unit
Forward Voltage
Reverse Current
Junction Capacitance
Thermal Resistance
Pulse measurement, per diode
Pulse measurement, per diode
per diode
Junction to Case, With heatsink
l Junction to Lead
Junction to Ambient
204 J534-1

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