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Datasheet RJE0601JPE-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


RJE Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1RJE0601JPESilicon P Channel MOS FET Series Power Switching

Preliminary Datasheet RJE0601JPE Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut
Renesas Technology
Renesas Technology
data
2RJE0603JPESilicon P Channel MOS FET Series Power Switching

Preliminary Datasheet RJE0603JPE Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut
Renesas Technology
Renesas Technology
data
3RJE0605JPDSilicon P Channel MOS FET Series Power Switching

Preliminary Datasheet RJE0605JPD Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut
Renesas Technology
Renesas Technology
data
4RJE0607JSPSilicon P Channel MOS FET Series Power Switching

Preliminary Datasheet RJE0607JSP Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut
Renesas Technology
Renesas Technology
data
5RJE0609JPDSilicon P Channel MOS FET Series Power Switching

Preliminary Datasheet RJE0609JPD Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut
Renesas Technology
Renesas Technology
data
6RJE0615JSPSilicon P Channel MOS FET Series Power Switching

Preliminary Datasheet RJE0615JSP Silicon P Channel MOS FET Series Power Switching Description R07DS0124EJ0200 (Previous: REJ03G1943-0100) Rev.2.00 Sep 01, 2010 This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature sh
Renesas Technology
Renesas Technology
data
7RJE0616JSPSilicon P Channel MOS FET Series Power Switching

Preliminary Datasheet RJE0616JSP Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut
Renesas Technology
Renesas Technology
data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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