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4AM17 fiches techniques PDF

Hitachi Semiconductor - Silicon N/P-Channel/P-Channel Power MOS FET Array

Numéro de référence 4AM17
Description Silicon N/P-Channel/P-Channel Power MOS FET Array
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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4AM17 fiche technique
4AM17
Silicon N/P Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
N Channel: RDS(on) 0.17 Ω, VGS = 10 V, ID = 4 A
P Channel : RDS(on) 0.2 Ω, VGS = –10 V, ID = –4 A
4 V gate drive devices.
High density mounting
Outline
SP-12
ADE-208-729 (Z)
1st. Edition
February 1999
1
G
2
D5
G
4
D8
G
9
D 12
G
11
D
1 2 3 4 5 6 7 8 9101112
S 3 S 6 S 7 S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
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