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PDF 2SA0879 Data sheet ( Hoja de datos )
| Número de pieza | 2SA0879 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
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Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1573
■ Features
• High collector-emitter voltage (Base open) VCEO
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−250
−200
−5
−70
−100
1
150
−55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1 : Emitter
123
2 : Collector
3 : Base
2.54±0.15
EIAJ : SC-51
TO-92L-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0
−200
V
Emitter-base voltage (Collector open) VEBO IE = −1 µA, IC = 0 −5 V
Forward current transfer ratio *
hFE VCE = −10 V, IC = −5 mA
60 220
Collector-emitter saturation voltage
VCE(sat) IC = −50 mA, IB = −5 mA
−1.5 V
Transition frequency
fT VCB = −10 V, IE = 10 mA, f = 200 MHz 50 80
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
5 10 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
60 to 150
100 to 220
Publication date: November 2002
www.DataSheet.in
Note) The part number in the parenthesis shows conventional part number.
SJC00006BED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA0879.PDF ] | |
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