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Sirectifier Semiconductors - Ultra Fast Recovery Diodes

Numéro de référence STPR1640CT
Description Ultra Fast Recovery Diodes
Fabricant Sirectifier Semiconductors 
Logo Sirectifier Semiconductors 





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STPR1640CT fiche technique
STPR1640CT
Ultra Fast Recovery Diodes
C(TAB)
AC A
A
C
A
A=Anode, C=Cathode, TAB=Cathode
STPR1640CT
VRRM
V
400
VRMS
V
280
VDC
V
400
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current
IFSM
Non Repetitive Peak Forward Surge Current
Per Diode Sinusoidal (JEDEC METHOD)
@TC=120oC
TP=10ms
TP=8.3ms
Maximum Forward Voltage
VF Pulse Width=300us
Duty Cycle
IF=16A @TJ=25oC
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=100oC
CJ Typical Junction Capacitance Per Element (Note 1)
TRR Maximum Reverse Recovery Time (Note 2)
ROJC Typical Thermal Resistance
TJ, TSTG Operating and Storage Temperature Range
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
Maximum Ratings
16
80
90
1.5
5
500
80
35
3.0
-55 to +150
Unit
A
A
V
uA
pF
ns
oC/W
oC
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
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