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PDF H30TLxx Data sheet ( Hoja de datos )

Número de pieza H30TLxx
Descripción PHASE CONTROL THYRISTOR
Fabricantes Hind Rectifiers 
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PHASE CONTROL THYRISTOR H30TB/TLXX
Symbol
Characteristics
Conditions
TJ (0C)
Value
Unit
BLOCKING PARAMETERS
VRRM
VDRM
IRRM
IDRM
dV/dT
Repetitive peak reverse voltage
Repetitive peak off-stage
voltage
Repetitive peak reverse current
Repetitive peak off-state current
Rep. rate of change of voltage
CONDUCTING PARAMETERS
V = VRRM
V = VRRM
@ 67%VDRM
IF(AV)
IRMS
ITSM
I2t
VT
V0
r0
di/dt
Average on-state current
RMS on-state current
Surge on-state current
I2t
Peak on-state voltage drop
Threshold voltage
On-state slope resistance
Repetitive rate of rise of current
180 sine, 50H Z,
TC = 850C
Sine wave, 10mS
without reverse
voltage
On-state
current = 100A
dIG/dT = 1A/µS
VGK = 1V
TRIGGERING PARAMETERS
IGT
VGT
IL
IH
PG –PEAK
VFGM
IFGM
Gate trigger current
Gate trigger voltage
Latching Current
Holding Current
Maximum Peak Gate Power
Maximum forward gate voltage
Maximum forward gate current
VD = 5V
VD = 5V
VD = 5V
Pulse width
100μSec
THERMAL & MECHANICAL PARAMETERS
R TH (J-C)
RTH (C-HK)
TJ
TSTG
F
W
Thermal impedance, 180
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to case
Case to heatsink
For TB
For TL
125
125
125
125
125
125
125
125
125
125
25
25
25
25
200-1600
200-1600
15
15
600
V
V
mA
mA
V/μS
30
50
500
1250
1.72
0.95
6.40
100
A
A
A
A2S
V
V
mΩ
A/μS
100
2.50
300
200
30
12
10
mA
V
mA
mA
W
V
A
0.93
0.30
125
-40 - 125
2
30
15
0C/W
0C/W
0C
0C
NM
gms
HIND RECTIFIERS LTD
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H30TLxx pdf
PHASE CONTROL THYRISTOR H30TB/TLXX
On State Characteristics
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5
Vt - V
Gate Trigger Characteristics
100
10
VGT
1
0.1
0.001
250C
IGT
IGD
0.01
0.1 1
IG (av ) - A
PO(tp)
30 W
(0.1ms
)
10 100
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