|
|
Numéro de référence | H955CHXX | ||
Description | PHASE CONTROL THYRISTOR | ||
Fabricant | Hind Rectifiers Limited | ||
Logo | |||
PHASE CONTROL THYRISTOR H955CHXX
www.DataSheet4U.com
Symbol
Characteristics
Conditions
TJ
(0C)
Value
Unit
BLOCKING PARAMETERS
VRRM
VDRM
IRRM
IDRM
Repetitive peak reverse voltage
Repetitive peak off-stage
voltage
Repetitive peak reverse current
Repetitive peak off-state current
CONDUCTING PARAMETERS
V = VRRM
V = VRRM
125 200-1800
125 200-1800
125 80
125 80
V
V
mA
mA
IF(AV)
IRMS
ITSM
I2t
VT
V0
R0
Average on-state current
RMS on-state current
Surge on-state current
I2t
Peak on-state voltage drop
Threshold voltage
On-state slope resistance
180 sine, 50H Z,
TC = 640C
Sine wave,
10mS without
reverse voltage
On-state
current = 3kA
125
125
125
125
955
1500
12.50
781
2
0.85
0.35
A
A
kA
kA2S
V
V
mΩ
TRIGGERING PARAMETERS
IGT Gate trigger current
VD = 5V
25 250
mA
VGT Gate trigger voltage
25 2.00
V
IL
PG–PEAK
Latching Current
Maximum Peak Gate Power
VD = 5V
25 1000
Pulse width
100μSec
150
mA
W
di/dt Repetitive rate of rise of current
120
A/μSec
VFGM Maximum forward gate voltage
12 V
IFGM Maximum forward gate current
50 A
THERMAL & MECHANICAL PARAMETERS
R TH (J-C)
RTH (C-HK)
TJ
TSTG
F
W
Thermal impedance, 180
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to case
Case to
heatsink
0.038
0.005
125
-40 - 125
15
280
0C/W
0C/W
0C
0C
KN
gms
HIND RECTIFIERS LTD
1 of 6
|
|||
Pages | Pages 6 | ||
Télécharger | [ H955CHXX ] |
No | Description détaillée | Fabricant |
H955CHXX | PHASE CONTROL THYRISTOR | Hind Rectifiers Limited |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |