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Numéro de référence | EIA7785-2 | ||
Description | 7.70-8.50GHz 2-Watt Internally Matched Power FET | ||
Fabricant | Excelics Semiconductor | ||
Logo | |||
UPDATED 11/16/2006
EIA7785-2
7.70-8.50GHz 2-Watt Internally Matched Power FET
FEATURES
• 7.70– 8.50GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +34 dBm Output Power at 1dB Compression
• 12.5 dB Power Gain at 1dB Compression
• 33% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.060 MIN.
.650±.008 .512
GATE
Excelics
EIA7785-2
YYWW
.060 MIN.
DRAIN
.022
.319
SN
.094
.382
.045
.004 .070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression f = 7.70-8.50GHz
VDS = 8V, IDSQ ≈ 800mA
Gain at 1dB Compression
f = 7.70-8.50GHz
VDS = 8V, IDSQ ≈ 800mA
Gain Flatness
f = 7.70-8.50GHz
VDS = 8V, IDSQ ≈ 800mA
Power Added Efficiency at 1dB Compression
VDS = 8V, IDSQ ≈ 800mA
f = 7.70-8.50GHz
Id1dB Drain Current at 1dB Compression f = 7.70-8.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
VDS = 3 V, IDS = 14 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
MIN
33.0
11.5
TYP
34.0
12.5
33
900
1400
-1.0
10
MAX
±0.6
1100
1800
-2.5
11
UNITS
dBm
dB
dB
%
mA
mA
V
oC/W
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Igsf Forward Gate Current
12
-5
21.6mA
Igsr Reverse Gate Current
-3.6mA
Pin Input Power
33dBm
Tch Channel Temperature
175 oC
Tstg
Storage Temperature
-65 to +175 oC
www.DataSheetP4Ut .com
Total Power Dissipation
13W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
8V
-3V
7.2mA
-1.2mA
@ 3dB Compression
175 oC
-65 to +175 oC
13W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised November 2006
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Pages | Pages 2 | ||
Télécharger | [ EIA7785-2 ] |
No | Description détaillée | Fabricant |
EIA7785-2 | 7.70-8.50GHz 2-Watt Internally Matched Power FET | Excelics Semiconductor |
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