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MMBD202SEW fiches techniques PDF

SEMTECH ELECTRONICS - SILICON EPITAXIAL PLANAR SWITCHING DIODE

Numéro de référence MMBD202SEW
Description SILICON EPITAXIAL PLANAR SWITCHING DIODE
Fabricant SEMTECH ELECTRONICS 
Logo SEMTECH ELECTRONICS 





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MMBD202SEW fiche technique
MMBD204SEW
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Applications
• Ultra high speed switching
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Maximum (Peak) Forward Current (Single)
Peak Forward Surge Current (tp = 1 µs)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 10 mA
Reverse Current
at VR = 15 V
Capacitance between Terminals
at VR = 6, f = 1 MHz
3
12
Marking Code: A7
Symbol
VRM
VR
IO
IFM
IFSM
Pd
TJ
Ts
Value
20
20
100
200
300
200
150
- 55 to + 150
Unit
V
V
mA
mA
mA
mW
OC
OC
Symbol
VF
IR
CT
Max.
1
0.1
4
Unit
V
µA
pF
www.DataSheet4U.com
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008

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