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Numéro de référence | MMBD202SEW | ||
Description | SILICON EPITAXIAL PLANAR SWITCHING DIODE | ||
Fabricant | SEMTECH ELECTRONICS | ||
Logo | |||
MMBD204SEW
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Applications
• Ultra high speed switching
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Maximum (Peak) Forward Current (Single)
Peak Forward Surge Current (tp = 1 µs)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 10 mA
Reverse Current
at VR = 15 V
Capacitance between Terminals
at VR = 6, f = 1 MHz
3
12
Marking Code: A7
Symbol
VRM
VR
IO
IFM
IFSM
Pd
TJ
Ts
Value
20
20
100
200
300
200
150
- 55 to + 150
Unit
V
V
mA
mA
mA
mW
OC
OC
Symbol
VF
IR
CT
Max.
1
0.1
4
Unit
V
µA
pF
www.DataSheet4U.com
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008
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Pages | Pages 2 | ||
Télécharger | [ MMBD202SEW ] |
No | Description détaillée | Fabricant |
MMBD202SEW | SILICON EPITAXIAL PLANAR SWITCHING DIODE | SEMTECH ELECTRONICS |
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