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Numéro de référence | K4B1G1646D | ||
Description | 1Gb D-die DDR3 SDRAM Specification | ||
Fabricant | Samsung semiconductor | ||
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1 Page
K4B1G04(08/16)46D
1Gb DDR3 SDRAM
1Gb D-die DDR3 SDRAM Specification
82 / 100 FBGA with Lead-Free & Halogen-Free
(RoHS Compliant)
CAUTION :
* This document includes some items still under discussion in JEDEC.
* Therefore, those may be changed without pre-notice based on JEDEC progress.
* And it’s highly recommended not to send the spec without Samsung’s permission.
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-
WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-
OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT
GUARANTEE OR WARRANTY OF ANY KIND.
www.Data1S.hFeoert4uUp.dcaotmes or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
Page 1 of 60
Rev. 1.1 August 2008
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Pages | Pages 30 | ||
Télécharger | [ K4B1G1646D ] |
No | Description détaillée | Fabricant |
K4B1G1646C | 1Gb C-die DDR3 SDRAM Specification | Samsung semiconductor |
K4B1G1646D | 1Gb D-die DDR3 SDRAM Specification | Samsung semiconductor |
K4B1G1646E | 1Gb E-die DDR3 SDRAM | Samsung |
K4B1G1646G | 1Gb G-die DDR3 SDRAM | Samsung |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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