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VMK165-007T fiches techniques PDF

IXYS Corporation - Dual Power MOSFET Module

Numéro de référence VMK165-007T
Description Dual Power MOSFET Module
Fabricant IXYS Corporation 
Logo IXYS Corporation 





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VMK165-007T fiche technique
Advanced Technical Information
Dual Power
MOSFET Module
Common-Source connected
N-Channel Enhancement Mode
VMK 165-007T
VDSS = 70 V
ID25 = 165 A
RDS(on) = 7 mW
45 1 2 3 67
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID
IDM
Ptot
TJ
TJM
Tstg
VISOL
Md
Weight
Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 6.8 kW
Continuous
Transient
70 V
70 V
±20 V
±30 V
TC = 25°C
TC = 100°C
TC = 25°C, tp = 10 µs, pulse width limited by TJM
165
104
660
TC = 25°C, TJ = 150°C
390
-40 ... +150
150
-40 ... +125
A
A
A
W
°C
°C
°C
50/60 Hz
IISOL £ 1 mA
t = 1 min
t=1s
Mounting torque(M5 or 10-32 UNF)
Terminal connection torque (M5)
3000
3600
V~
V~
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
Typical including screws
90 g
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 8 mA
VGS = ±20 V DC, VDS = 0
VDS = VDSS,
VGS = 0 V, TJ = 25°C
VDS = 0.8 • VDSS, VGS = 0 V, TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 µs, duty cycle d £ 2 %
70
2
V
4V
500 nA
200 µA
1 mA
6 7 mW
Data per MOSFET unless otherwise stated.
www.DataSheet4U.com
TO-240 AA
E 72873
12
3
6
7
4
5
1, 3 = Drain, 2 = Common Source
5, 6 = Gate, 4, 7 = Kelvin Source
Features
Two MOSFET with common source
International standard package
JEDEC TO-240 AA
Direct copper bonded Al2O3 ceramic
base plate
Isolation voltage 3000 V~
Low RDS(on) HDMOSTM process
Low package inductance for high
speed switching
Kelvin source contact
Keyed twin plugs
Applications
Push-pull inverters
Switched-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
AC static switches
Advantages
Easy to mount with two screws
Space and weight savings
High power density
Low losses
© 2000 IXYS All rights reserved
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