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Numéro de référence | DN0150BLP4 | ||
Description | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | ||
Fabricant | Diodes Incorporated | ||
Logo | |||
1 Page
Features
• Epitaxial Die Construction
• Ultra-Small Leadless Surface Mount Package
• Ultra Low Profile (0.4mm max)
• Complementary PNP Type Available (DP0150ALP4 /
DP0150BLP4)
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q 101 Standards for High Reliability
DN0150ALP4 / DN0150BLP4
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Mechanical Data
• Case: DFN1006H4-3
• Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections Indicator: Collector Dot
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Ordering Information: See Page 3
• Marking Information: See Page 3
• Weight: 0.0008 grams (approximate)
Bottom View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Peak Pulse Collector Current
Base Current
1 3E
C
2B
Top View
Device Schematic
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
60
50
5
100
200
30
Unit
V
V
V
mA
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
450
278
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
DN0150ADJ
DN0150BDJ
www.DSaMtAaSLhLeSeItG4UNA.cLomCHARACTERISTICS
Transition Frequency
Output Capactiance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
Min
60
50
5
—
—
—
120
200
fT 60
Cob —
Typ
—
—
—
—
—
0.10
—
—
—
1.3
Max
—
—
—
0.1
0.1
0.25
240
400
—
—
Unit Test Condition
V IC = 10μA, IE = 0
V IC = 1mA, IB = 0
V IE = 10μA, IC = 0
μA VCB = 60V, IE = 0
μA VEB = 5V, IC = 0
V IC = 100mA, IB = 10mA
— VCE = 6V, IC = 2mA
MHz
pF
VCE = 10V, IE = -1mA
f = 30MHz
VCB = 10V, IE = 0,
f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 3 - 2
1 of 4
www.diodes.com
July 2009
© Diodes Incorporated
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Pages | Pages 4 | ||
Télécharger | [ DN0150BLP4 ] |
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