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DE275-101N30A fiches techniques PDF

IXYS Corporation - RF Power MOSFET

Numéro de référence DE275-101N30A
Description RF Power MOSFET
Fabricant IXYS Corporation 
Logo IXYS Corporation 





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DE275-101N30A fiche technique
DE275-101N30A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS IDM, di/dt 100A/µs, VDD VDSS,
Tj 150°C, RG = 0.2
IS = 0
Maximum Ratings
100 V
100 V
±20 V
±30 V
30.0 A
240 A
TBD
A
TBD mJ
5.5 V/ns
>200 V/ns
VDSS = 100 V
ID25 = 30.0 A
RDS(on) 0.06
PDC = 550 W
PDC
PDHS
PDAMB
RthJC
RthJHS
Tc = 25°C
Derate 4.4W/°C above 25°C
Tc = 25°C
550 W
270 W
3.5
0.25
0.53
W
C/W
C/W
GATE
SG1 SG2
DRAIN
SD1 SD2
Symbol Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min. typ.
max.
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
VDSS
VGS = 0 V, ID = 3 ma
100
V Increased temperature and power
cycling capability
VGS(th)
IGSS
IDSS
VDS = VGS, ID = 250 µa
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
2 2.5
4 V IXYS advanced low Qg process
±100
nA
Low gate charge and capacitances
easier to drive
25
250
µA faster switching
µA Low RDS(on)
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t 300µS, duty cycle d 2%
0.06
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
gfs VDS = 15 V, ID = 0.5ID25, pulse test
www.DataSheet4U.com
TJ
TJM
9.7 S
Advantages
-55
+175
°C Optimized for RF and high speed
175
°C
switching
Easy to mount—no insulators needed
Tstg
-55
+175
°C High power density
TL 1.6mm(0.063 in) from case for 10 s
300 °C
Weight
2g

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