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PDF SPI21N10 Data sheet ( Hoja de datos )
| Número de pieza | SPI21N10 | |
| Descripción | SIPMOS Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SPI21N10 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Preliminary data
SPI21N10
SPP21N10,SPB21N10
SIPMOS Power-Transistor
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
P-TO262-3-1
dv/dt rated
Product Summary
VDS 100 V
RDS(on) 80 m
ID 21 A
P-TO263-3-2
P-TO220-3-1
Type
SPP21N10
SPB21N10
SPI21N10
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67042-S4116
Q67042-S4102
Q67042-S4117
Marking
21N10
21N10
21N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC=25°C
TC=100°C
Pulsed drain currentwww.DataSheet4U.net
TC=25°C
Avalanche energy, single pulse
ID=21 A , VDD=25V, RGS=25
ID
ID puls
EAS
Reverse diode dv/dt
dv/dt
IS=21A, VDS=80V, di/dt=200A/µs, Tjmax =175°C
Gate source voltage
VGS
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
Value
21
15.0
84
130
6
±20
90
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2002-01-31
1 page  
Preliminary data
SPI21N10
SPP21N10,SPB21N10
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
50 e
A
30
d
VGS[V]=
a= 5.6
b= 6.0
c= 7.0
d= 8.0
e= 10.0
c
20
b
a
10
0
0 5 10 V 20
VDS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
260
m
ab
c
d
220
200
180
160
140
120
100
80
60
40
20
0
0
e
VGS[V]=
a= 5.6
b= 6.0
c= 7.0
d= 8.0
e= 10.0
5 10 15 20 25 30 35 40 A 50
ID
7 Typ. transfer characteristics
ID= f ( VGS ); VDS 2 x ID x RDS(on)max
parameter: tp = 80 µs
30
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
14
S
Awww.DataSheet4U.net
20
15
10
5
0
2 3 4 5 6V 8
VGS
12
11
10
9
8
7
6
5
4
3
2
1
0
0 4 8 12 16 A 24
ID
Page 5
2002-01-31
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SPI21N10.PDF ] | |
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