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Pacific Silicon Sensor - Pacific Silicon Sensor

Numéro de référence AD003B-9-TO5I
Description Pacific Silicon Sensor
Fabricant Pacific Silicon Sensor 
Logo Pacific Silicon Sensor 





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AD003B-9-TO5I fiche technique
Pacific Silicon Sensor Series 9 Data Sheet
Part Description AD003B-9-TO5i
Order # 06-087
ACTIVE AREA: 0.33 mm2
(1.10 mm X 0.30 mm )
Ø9.1
Ø6.35 120°
VIEWING
Ø8.13
ANGLE
FRONTSIDE VIEW
3.2
1.90
Ø0.45
3 PL
ANODE
PIN 1
CATHODE
PIN 2
13.2 MIN
3 PL
CASE
PIN 3
Ø5.08
PIN CIRCLE
BACKSIDE VIEW
FEATURES
1.10 mm X 0.30 mm active area
Low slope multiplication curve
High speed, low noise
NIR enhanced
DESCRIPTION
0.33 mm2 High Speed, Low Noise Avalanche Photodiode
with N on P construction. Hermetically packaged in a
TO-5 with a clear borosilicate glass window cap.
APPLICATIONS
High speed optical
communications
Laser range finder
Medical equipment
High speed photometry
SC
ABSOLUTE MAXIMUM RATING
SYMBOL PARAMETER MIN
TSTG
TOP
TSOLDERING
Storage Temp
Operating Temp
Soldering Temp
10 seconds
-60
-20
Electrical Power
Dissipation @ 22°C
Optical Peak Value,
once for 1 second
-
-
IPH (DC)
Continuous Optical
Operation
-
IPH (AC)
Pulsed Signal Input
50 µs “on” / 1 ms “off”
-
MAX
+100
+70
+260
100
200
250
1
UNITS
°C
°C
°C
mW
mW
µA
mA
SPECTRAL RESPONSE at M = 100
70
60
50
40
30
20
10
0
400
500
600
700
800
900
1000
1100
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS @ 22 °C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN TYP MAX UNITS
ID Dark Current
C Capacitance
M = 100*
M = 100*
--- 2.0 6.0 nA
--- 2.0 --- pF
VBR Breakdown Voltage
ID = 2 µA
Temperature Coefficient of VBR
Responsivity
M = 100; = 0 V; λ = 905 nm
120 200 --- V
--- 1.55 --- V/K
55 60 --- A/W
∆ƒ3dB
Bandwidth
-3dB
--- 0.35 --- GHz
tr Rise Time
M = 100
--- 1.0 --- ns
Optimum Gain
50 60 ---
“Excess Noise” factor
M = 100
--- 2.5 ---
“Excess Noise” index
M = 100
--- 0.2 ---
Noise Current
M = 100
---
0.75
--- pA/Hz1/2
Max Gain
200 --- ---
NEP
Noise Equivalent Power
M = 100; λ = 905 nm
---
3.0 X 10-14
--- W/Hz1/2
* Measurement conditions: Setup of photo current 10 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED. Increase the photo
current up to 1 µA, (M = 100) by internal multiplication due to an increasing bias voltage.
Disclaimer: Due to our policy of continued development, specifications are subject to change without notice.
12/22/2009
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