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PDF U309 Data sheet ( Hoja de datos )
| Número de pieza | U309 | |
| Descripción | Amplifier | |
| Fabricantes | Micross | |
| Logotipo |  |
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U309
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U309
The U309 is a high frequency n-channel JFET offering a
wide range and low noise performance. The
FEATURES
DIRECT REPLACEMENT FOR SILICONIX U309
hermetically sealed TO-18 package is well suited for
high reliability and harsh environment applications.
(See Packaging Information).
U309 Benefits:
High Power Low Noise gain
Dynamic Range greater than 100dB
Easily matched to 75Ω input
U309 Applications:
OUTSTANDING HIGH FREQUENCY GAIN
LOW HIGH FREQUENCY NOISE
ABSOLUTE MAXIMUM RATINGS @ 25°C1
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gpg = 11.5dB
NF = 2.7dB
‐55°C to +150°C
‐55°C to +135°C
500mW
UHV / VHF Amplifiers
Mixers
Oscillators
Gate Current
MAXIMUM VOLTAGES
Gate to Drain Voltage or Gate to Source Voltage
10mA
‐25V
U309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP. MAX UNIT
CONDITIONS
BVGSS
Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ V
VDS = 0V, IG = ‐1µA
VGS(F)
Gate to Source Forward Voltage
0.7 ‐‐
1
VDS = 0V, IG = 10mA
VGS(off)
IDSS
Gate to Source Cutoff Voltage
‐1 ‐‐ ‐4
Drain to Source Saturation Current2 12 ‐‐ 30 mA
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V
IG
Gate Operating Current (Note 3)
‐‐ ‐15 ‐‐ pA
VDG = 9V, ID = 10mA
rDS(on)
Drain to Source On Resistance
‐‐ 35 ‐‐
Ω
VGS = 0V, ID = 1mA
U309 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP.
gfs
Forward Transconductance
10 14
gos
Output Conductance
‐‐ 110
Click ToCiss
Input Capacitance
‐‐ 4
MAX
‐‐
250
5
Crss
Reverse Transfer Capacitance
‐‐ 1.9 2.5
BuyUNIT
mS
µS
pF
CONDITIONS
VDS = 10V, ID = 10mA , f = 1kHz
VDS = 10V, VGS = ‐10V , f = 1MHz
en
Equivalent Noise Voltage
6
‐‐
‐‐
nV/√Hz
VDS = 10V, ID = 10mA , f = 100Hz
U309 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNIT
CONDITIONS
NF
Noise Figure
f = 105MHz
‐‐
1.5
‐‐
f = 450MHz
‐‐
2.7
‐‐
Gpg
Power Gain3
f = 105MHz
‐‐
16
‐‐
f = 450MHz
‐‐
11.5
‐‐
gfg
Forward Transconductance f = 105MHz
‐‐
14
‐‐
f = 450MHz
‐‐
13
‐‐
gog
Output Conductance
f = 105MHz
‐‐
0.16
‐‐
f = 450MHz
‐‐
0.55
‐‐
dB
dB
mS
VDS = 10V, ID = 10mA
Note 1 ‐ Absolute maximum ratings are limiting values above which U309 serviceability may be impaired.
Note 2 ‐ Pulse test : PW ≤ 3 00µs, Duty Cycle ≤ 3%
Note 3 ‐ Measured at optim um input n oise match
Micros s Components Europe
Available Packages:
U309 in TO-18
U309 in bare die.
TO-18 (Bottom View)
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
www.DataSheet4U.comInformation furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx
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