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PDF U440 Data sheet ( Hoja de datos )
| Número de pieza | U440 | |
| Descripción | Low Leakage | |
| Fabricantes | Micross | |
| Logotipo |  |
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U440
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U440
The U440 is a tightly matched Monolithic Dual N-Channel JFET
The U440 are monolithic dual JFETs mounted in a
single TO-71 package. The monolithic dual chip design
reduces parasitics and gives better performance at very
high frequencies while ensuring extremely tight
matching. These devices are an excellent choice for
use as wideband differential amplifiers in demanding
test and measurement applications. The U440 is a
direct replacement for discontinued Siliconix U440.
FEATURES
Direct Replacement for SILICONIX U440
HIGH CMRR
LOW GATE LEAKAGE
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
CMRR ≥ 85dB
IGSS ≤ 1 pA
The hermetically sealed TO-71 is well suited for military
applications.
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
‐65°C to +150°C
‐55°C to +135°C
(See Packaging Information).
Continuous Power Dissipation (Total)
Maximum Currents
500mW
Gate Current
U440 Applications:
Wideband Differential Amps
High-Speed,Temp-Compensated Single-
Ended Input Amps
High-Speed Comparators
Impedance Converters and vibrations
detectors.
Maximum Voltages
Gate to Drain
Gate to Source
Gate to Gate
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
50mA
‐25V
‐25V
±50V
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|VGS1 – VGS2 |
∆|VGS1 – VGS2 | / ∆T
IDSS1 / IDSS2
Click ToGfs1 / Gfs2
Differential Gate to Source Cutoff Voltage
Differential Gate to Source Cutoff
Voltage Change with Temperature
Gate to Source Saturation Current Ratio
Forward Transconductance Ratio2
20
0.07
0.97
Buy10 mV VDG = 10V, ID = 5mA
µV/°C VDG = 10V, ID = 5mA
TA = ‐55°C to +125°C
% VDS = 10V, VGS = 0V
% VDS = 10V, ID = 5mA, f = 1kHz
CMRR
Common Mode Rejection Ratio
85
dB VDG = 5 to 10V, ID = 5mA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BVGSS
VGS(off)
IDSS
IGSS
IG
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Saturation Current
Gate Leakage Current3
Gate Operating Current
‐25
‐1
6
TYP.
‐3.5
15
‐1
‐1
MAX.
‐6
30
‐500
‐500
gfs
Forward Transconductance
4.5 6 9
gos Output Conductance 70 200
CISS
Input Capacitance
3
CRSS Reverse Transfer Capacitance 1
en
Equivalent Input Noise Voltage
4
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%
3. Assumes smaller value in numerator
UNITS
V
V
mA
pA
pA
mS
µS
pF
pF
nV/√Hz
CONDITIONS
IG = ‐1µA, VDS = 0V
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V
VGS = ‐15V, VDS = 0V
VDG = 10V, ID = 5mA
VDS = 10V, ID= 5mA, f = 1kHz
VDS = 10V, ID = 5mA, f = 1MHz
VDS = 10V, ID = 5mA, f = 10kHz
TO-71 (Top View)
Available Packages:
U440 in TO-71
U440 available as bare die
Please contact Micross for full package and die dimensions:
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet U440.PDF ] | |
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