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2SA1111 fiches techniques PDF

Inchange Semiconductor - POWER TRANSISTOR

Numéro de référence 2SA1111
Description POWER TRANSISTOR
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SA1111 fiche technique
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1111 2SA1112
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2591/2592
·Good linearity of hFE
·High VCEO
APPLICATIONS
·For audio frequency, high power
amplifiers application
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SA1111
2SA1112
Open emitter
VCEO
Collector-emitter voltage
2SA1111
2SA1112
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-150
-180
-150
-180
-5
-1
-1.5
20
150
-55~150
UNIT
V
V
V
A
A
W

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