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Datasheet IDB10S60C-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
IDB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IDB04E120 | Fast Switching EmCon Diode IDP04E120 IDB04E120 Fast Switching EmCon Diode
Feature • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage
www.DataSheet4U.net
Product Summary VRRM IF VF T jmax
P-TO220-3.SMD
1200 4 1.65 150
P-TO220-2-2.
V A V °C
• Easy para  Infineon Technologies diode | | |
| 2 | IDB06E60 | Fast Switching EmCon Diode IDP06E60 IDB06E60 Fast Switching EmCon Diode
Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage
www.DataSheet4U.net
Product Summary VRRM IF VF T jmax
P-TO220-3.SMD
600 6 1.5 175
P-TO220-2-2.
V A V °C
• 175°C operati Infineon Technologies diode | | |
| 3 | IDB06S60C | 2nd Generation thinQ SiC Schottky Diode IDB06S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free Infineon Technologies diode | | |
| 4 | IDB09E120 | Fast Switching EmCon Diode IDP09E120 IDB09E120 Fast Switching EmCon Diode
Feature • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage
www.DataSheet4U.net
Product Summary VRRM IF VF T jmax
P-TO220-3.SMD
1200 9 1.65 150
P-TO220-2-2.
V A V °C
• Easy para Infineon Technologies diode | | |
| 5 | IDB09E60 | Fast Switching EmCon Diode IDP09E60 IDB09E60 Fast Switching EmCon Diode
Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175°C operating temperature • Easy paralleling Product Summary VRRM IF VF T jmax
P-TO220-3.SMD
600 9 1.5 175
P-TO220-2- Infineon Technologies diode | | |
| 6 | IDB10S60C | 2nd Generation thinQ SiC Schottky Diode IDB10S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free Infineon Technologies diode | | |
| 7 | IDB12E120 | Fast Switching EmCon Diode IDP12E120 IDB12E120 Fast Switching EmCon Diode
Feature • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling Product Summary VRRM IF VF T jmax
P-TO220-3.SMD
1200 12 1.65 150
P-TO220-2-2.
V A V °C
Type IDP12E1 Infineon Technologies diode | |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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