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IDB18E120 fiches techniques PDF

Infineon Technologies - Fast Switching Emitter Controlled Diode

Numéro de référence IDB18E120
Description Fast Switching Emitter Controlled Diode
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IDB18E120 fiche technique
Fast Switching Emitter Controlled Diode
Feature
1200 V Emitter Controlled technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
Easy paralleling
* RoHS compliant
IDB18E120
Product Summary
VRRM
1200
IF
VF
Tjmax
18
1.65
150
V
A
V
°C
PG-TO263-3-2
2
1
3
Type
IDB18E120
Package
Ordering Code Marking Pin 1 PIN 2 PIN 3
PG-TO263-3-2
-
D18E120 NC
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continous forward current
TC=25°C
TC=90°C
VRRM
IF
Surge non repetitive forward current
IFSM
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
IFRM
TC=25°C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25°C
TC=90°C
Ptot
Operating and storage temperature
Soldering temperature
reflow soldering, MSL1
Tj , Tstg
TS
Value
1200
31
19.8
78
47
113
54
-55...+150
260
Unit
V
A
W
°C
°C
Rev.2.3
Page 1
2013-07-02

PagesPages 8
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