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Datasheet IDD09E60-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
IDD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IDD03E60 | Fast Switching Emitter Controlled Diode F!a1s2t S5w)i2t#c(h)i-n'g E,mitt.e-r"C-EoJn@tArolled Diode
/A=NOLA #"6
00
V0 E m>it te@r? C"`RoPnUtr[o\llYe\dTetechnology #" 2CDB64@F6BI #"- @7DCG:D49:? 8 #"& @G B6F6BC6 B64@F6BI 492B86 #"& @G 7@BG2B5F@=D286 #" K @A6B2D:? 8 D6> A6B2DEB6 #" 2CI A2B2==6=:? 8
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0 .$3#2 3, , !  Infineon Technologies diode | | |
| 2 | IDD03SG60C | Schottky Diode 3rd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark
• No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoH Infineon Technologies diode | | |
| 3 | IDD04E120 | Fast Switching EmCon Diode IDP04E120
Fast Switching EmCon Diode
Feature • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage
www.DataSheet4U.net
Product Summary VRRM IF VF T jmax 1200 4 1.65 150 V A V °C
PG-TO220-2-2.
• Easy paralleling
Type IDP04E120 Infineon Technologies diode | | |
| 4 | IDD04S60C | Schottky Diode IDD04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free Infineon Technologies diode | | |
| 5 | IDD04SG60C | Schottky Diode 3rd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark
• No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoH Infineon Technologies diode | | |
| 6 | IDD05SG60C | Schottky Diode 3rd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark
• No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoH Infineon Technologies diode | | |
| 7 | IDD05U | DC - DC CONVERTER 5 ~ 6W SINGLE & DUAL OUTPUT IDD05U SERIES
DC - DC CONVERTER 5 ~ 6W SINGLE & DUAL OUTPUT
FEATURES
‧EFFICIENCY UP TO 82% ‧4:1 WIDE INPUT RANGE ‧I/O ISOLATION ‧INPUT Pi FILTER ‧SHORT CIRCUIT PROTECTION ‧HIGH PERFORMANCE ‧UL/cUL/TUV/CE ‧2 YEARS WARRANTY
H a
UL 60950-1 EN 60950-1
R
MODEL LIST
INPUT EFF. EFF. CAP  Chinfa Electronics Ind converter | |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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