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PDF T30N60BD1 Data sheet ( Hoja de datos )
| Número de pieza | T30N60BD1 | |
| Descripción | IXST30N60BD1 | |
| Fabricantes | IXYS Corporation | |
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High Speed IGBT with Diode
Short Circuit SOA Capability
IXSH 30N60BD1
IXSK 30N60BD1
IXST 30N60BD1
VCES
IC25
VCE(sat)
tfi
= 600 V
= 55 A
= 2.0 V
= 140 ns
Symbol
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Test Conditions
Maximum Ratings
VCES
V
CGR
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MW
VGES
VGEM
Continuous
Transient
I
C25
T
C
= 25°C
IC90 TC = 90°C
I
CM
T
C
= 25°C, 1 ms
SSOA
(RBSOA)
VGE= 15 V, TJ = 125°C, RG = 10 W
Clamped inductive load, VCL = 0.8 VCES
tSC
(SCSOA)
VGE= 15 V, VCE = 360 V, TJ = 125°C
RG = 33 W, non repetitive
P
C
T
C
= 25°C
TJ
TJM
T
stg
Md Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
600
600
±20
±30
55
30
110
ICM = 60
10
V
V
V
V
A
A
A
A
ms
200 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
300 °C
Weight
TO-247/TO-268
TO-264
6/4 g
10 g
Symbol
BVCES
VGE(th)
ICES
I
GES
VCE(sat)
Test Conditions
IC = 750 mA, VGE = 0 V
IC = 2.5 mA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
V
CE
=
0
V,
V
GE
=
±20
V
VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
600
4
IC = IC90
IC = IC25
V
7V
200 mA
3 mA
±100 nA
2.0 V
2.7 V
TO-247AD
(IXSH)
G
CE
TO-268 (D3)
(IXST)
TO-264
(IXSK)
G
E
C
G
C
E
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard packages:
JEDEC TO-247, TO-264& TO-268
• Short Circuit SOA capability
• Medium freqeuncy IGBT and anti-
parallel FRED in one package
• New generation HDMOSTM process
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Surface mountable, high power case
style
• Reduces assembly time and cost
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98517A (7/00)
1-5
1 page  
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
60
A
50
IF 40
30
20
TVJ=150°C
TVJ=100°C
10
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TVJ=25°C
0
0 1 2 3V
VF
Fig. 12 Forward current IF versus VF
2.0
1.5
Kf
1.0
0.5
IRM
Qr
1000
nC
800
Qr
600
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
400
200
30
A
25
IRM
20
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
15
10
5
0
100 A/ms 1000
-diF/dt
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
90
ns
trr
80
TVJ=100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
70
0
0 200 400 600 A8/0m0s 1000
-diF/dt
Fig. 14 Peak reverse current IRM
versus -diF/dt
20
V
VFR
15
TVJ= 100°C
IF = 30A
t
fr
VFR
1.00
µs
tfr
0.75
10 0.50
5 0.25
0.0
0
40 80 120 °C 160
TVJ
Fig. 15 Dynamic parameters Qr, IRM
versus TVJ
1
K/W
60
0 200 400 600 A8/0m0s 1000
-diF/dt
Fig. 16 Recovery time trr versus -diF/dt
0.1
ZthJC
0 0.00
0 200 400 600 A80/m0s 1000
diF/dt
Fig. 17 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 0.502
2 0.193
3 0.205
0.0052
0.0003
0.0162
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 18 Transient thermal resistance junction to case
0.1
DSEP 29-06
s1
t
© 2000 IXYS All rights reserved
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| PDF Descargar | [ Datasheet T30N60BD1.PDF ] | |
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