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Número de pieza | K10T60 | |
Descripción | IGBT | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K10T60 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! TrenchStop® Series
IKP10N60T
p
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
PG-TO-220-3-1
C
E
Type
VCE
IC VCE(sat),Tj=25°C Tj,max
IKP10N60T 600V 10A
1.5V
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE ≤ 600V, Tj ≤ 175°C
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature,
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Marking Code
K10T60
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO-220-3-1
Value
600
20
10
30
30
20
10
30
±20
5
110
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
www.DPataoSwheeet4rUS.neetmiconductors
1
Rev. 2.2 May 06
1 page TrenchStop® Series
IKP10N60T
p
30A
25A
20A
VGE=20V
15V
12V
10V
15A 8V
6V
10A
5A
0A
0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
30A
25A
20A
VGE=20V
15V
12V
10V
15A
8V
6V
10A
5A
0A
0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
5V
25A
20A
15A
10A
5A TJ=175°C
25°C
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
3,0V
2,5V
IC=20A
2,0V
1,5V
1,0V
IC=10A
IC=5A
0,5V
0,0V
-50°C
0°C
50°C 100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.2 May 06
5 Page TrenchStop® Series
IKP10N60T
p
PGT-TOO-222200A-B3-1
symbol
A
B
C
D
E
F
G
H
K
L
M
N
P
T
Dimensions
[mm]
min max
9.70 10.30
14.88 15.95
0.65 0.86
3.55 3.89
2.60 3.00
6.00 6.80
13.00 14.00
4.35 4.75
0.38 0.65
0.95 1.32
2.54 typ.
4.30 4.50
1.17 1.40
2.30 2.72
[inch]
min max
0.3819 0.4055
0.5858 0.6280
0.0256 0.0339
0.1398 0.1531
0.1024 0.1181
0.2362 0.2677
0.5118 0.5512
0.1713 0.1870
0.0150 0.0256
0.0374 0.0520
0.1 typ.
0.1693 0.1772
0.0461 0.0551
0.0906 0.1071
Power Semiconductors
11
Rev. 2.2 May 06
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet K10T60.PDF ] |
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K10T60 | IGBT | Infineon Technologies |
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