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PDF HP142T Data sheet ( Hoja de datos )
| Número de pieza | HP142T | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | SHANTOU HUASHAN ELECTRONIC DEVICES | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HP142T (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN DARLINGTON TRANSISTOR
HP142T
█ APPLICATIONS
High DC Current Gain
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation（Tc=25℃）…………………… 80W
VCBO——Collector-Base Voltage…………………………… 100V
VCEO——Collector-Emitter Voltage………………………… 100V
VEBO——Emitter-Base Voltage……………………………… 5V
IC——Collector Current（DC）……………………………… 10A
IB——Base Current……………………………………………0.5A
TO-220
1―Base，B
2―Collector，C
3―Emitter, E
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO(SUS)
Collector-Emitter Sustaining Voltage
100
V IC=30mA, IB=0
ICEO
Collector Cutoff Current
2 mA VCE=50V, IB=0
ICBO
Collector Cutoff Current
1 mA VCB=100V, IE=0
IEBO
Emitter-Base Cutoff Current
2 mA VEB=5V, IC=0
HFE（1）
DC Current Gain
1000
VCE=4V, IC=5A
HFE（2）
500 VCE=4V, IC=10A
VCE(sat1) Collector- Emitter Saturation Voltage
2 V IC=5A, IB=10mA
VCE(sat2)
3 V IC=10A, IB=40mA
VBE(sat)
Base- Emitter Saturation Voltage
3.5 V IC=10A, IB=40mA
VBE(on)
Base- Emitter On Voltage
3 V VCE=4V,IC=10A,
tD Deiay time
tR Rise Time
tS Storage Time
0.15
0.55
2.5
uS
uS
Vcc=30V,Ic=5A
IB1=20mA
uS IB2=-20mA
tF Fall Time
2.5 uS
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet HP142T.PDF ] | |
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